s m d ty p e t r a n s i s t o r s w w w . k e x i n . c o m . c n 1 pnp transistors kta 1298 features collect or pow er diss ipation: p c =200mw collect or curr ent: i c =-800ma absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-em itt er voltage v ceo -35 v collector-base volt age v cbo -30 v em itt er-base voltage v ebo -5 v collector curr ent i c -800 m a collector pow er dissipati on p c 200 m w junct ion tem pera ture t j 150 storage tem pera ture rang e t stg -55 to 150 ele ctric al characteristics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-ba se breakdow n voltage v (br)cbo i c =-1ma ,i e =0 -35 v collector-emit ter breakdow n voltage v (br)ceo i c =-10 m a,i b =0 -30 v em itt er- base brea kdow n voltage v (br)ebo i e =-1ma ,i c =0 -5 v collector cut-off curre nt i cbo v cb =-30 v, i e =0 -0.1 ua em itt er cut-o ff cur rent i ebo v eb =-5v, i c =0 -0.1 ua v ce =-1v, i c =-10 0m a 100 320 v ce =-1v, i c =-80 0m a 40 collector-em itt er saturation voltage v ce(sat) i c =-50 0m a, i b =-20 m a -0.4 v transition frequen cy f t v ce =-5v, i c =-10 m a 120 mh z collector output capacitance c ob v cb =-10 v, i e =0, f=1mhz 13 pf h fe dc cu rre nt gain h fe classif ication t y p e k t a 1 2 9 8 - o k t a 1 2 9 8 - y r a n g e 1 0 0 - 2 0 0 1 6 0 - 3 2 0 m a r k i n g k i o k i y 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01
s m d ty p e w w w . k exin . com . c n 2 t ran s i s t o r s pnp transistors kta 1298 ty pic al c har ac t er is it ic s
|
